VISHAY
GSD2004S
Vishay Semiconductors
Dual In-Series Small-Signal High-Voltage Switching Diode
Features
鈥?Silicon Epitaxial Planar Diode
鈥?Fast switching dual in-series diode, especially
suited for applications requiring high voltage
capability
2
1
1
3
Mechanical Data
Case:
SOT-23 (TO-236AB) Plastic case
Weight:
approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
3
2
18545
Parts Table
Part
GSD2004S
Ordering code
GSD2004S-GS18 or GSD2004S-GS08
DB6
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 擄C, unless otherwise specified
Parameter
Continuous reverse voltage
Peak repetitive reverse voltage
Peak repetitive reverse current
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward
current
Power dissipation
1)
Test condition
Symbol
V
R
V
RRM
I
RRM
I
F
I
RFM
Value
240
300
200
225
625
4.0
1.0
350
1)
Unit
V
V
mA
mA
mA
A
A
mW
t
p
= 1
碌s
t
p
= 1 s
I
FSM
I
FSM
P
tot
Device on Fiberglass Substrate, see layout on second page
Thermal Characteristics
T
amb
= 25 擄C, unless otherwise specified
Parameter
Typical thermal resistance
junction to ambiant air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
S
Value
357
1)
150
- 65 to + 150
Unit
擄C/W
擄C
擄C
Device on Fiberglass Substrate, see layout on second page
Document Number 85728
Rev. 1.3, 08-Jul-04
www.vishay.com
1