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VISHAY

GSD2004S

Vishay Semiconductors

Dual In-Series Small-Signal High-Voltage Switching Diode

Features

鈥?Silicon Epitaxial Planar Diode

鈥?Fast switching dual in-series diode, especially

suited for applications requiring high voltage

capability

2

1

1

3

Mechanical Data

Case:

SOT-23 (TO-236AB) Plastic case

Weight:

approx. 8.8 mg

Packaging Codes/Options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box

GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

3

2

18545

Parts Table

Part

GSD2004S

Ordering code

GSD2004S-GS18 or GSD2004S-GS08

DB6

Marking

Remarks

Tape and Reel

Absolute Maximum Ratings

T

amb

= 25 擄C, unless otherwise specified

Parameter

Continuous reverse voltage

Peak repetitive reverse voltage

Peak repetitive reverse current

Forward current (continuous)

Peak repetitive forward current

Non-repetitive peak forward

current

Power dissipation

1)

Test condition

Symbol

V

R

V

RRM

I

RRM

I

F

I

RFM

Value

240

300

200

225

625

4.0

1.0

350

1)

Unit

V

V

mA

mA

mA

A

A

mW

t

p

= 1

碌s

t

p

= 1 s

I

FSM

I

FSM

P

tot

Device on Fiberglass Substrate, see layout on second page

Thermal Characteristics

T

amb

= 25 擄C, unless otherwise specified

Parameter

Typical thermal resistance

junction to ambiant air

Junction temperature

Storage temperature range

1)

Test condition

Symbol

R

thJA

T

j

T

S

Value

357

1)

150

- 65 to + 150

Unit

擄C/W

擄C

擄C

Device on Fiberglass Substrate, see layout on second page

Document Number 85728

Rev. 1.3, 08-Jul-04

www.vishay.com

1

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