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GS882Z18B-11I Datasheet

  • GS882Z18B-11I

  • 8Mb Pipelined and Flow Through Synchronous NBT SRAMs

  • 34頁

  • ETC

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Preliminary
GS882Z18/36B-11/100/80/66
119-Bump BGA
Commercial Temp
Industrial Temp
Features
鈥?512K x 18 and 256K x 36 configurations
鈥?User-configurable Pipelined and Flow Through mode
鈥?NBT (No Bus Turn Around) functionality allows zero wait
鈥?Read-Write-Read bus utilization
鈥?Fully pin-compatible with both pipelined and flow through
NtRAM鈩? NoBL鈩?and ZBT鈩?SRAMs
鈥?IEEE 1149.1 JTAG-compatible Boundary Scan
鈥?On-chip write parity checking; even or odd selectable
鈥?ZQ mode pin for user selectable high/low output drive
strength.
鈥?x16/x32 mode with on-chip parity encoding and error
detection
鈥?Pin-compatible with 2M, 4M and 16M devices
鈥?3.3 V +10%/鈥?% core power supply
鈥?2.5 V or 3.3 V I/O supply
鈥?LBO pin for Linear or Interleave Burst mode
鈥?Byte write operation (9-bit Bytes)
鈥?3 chip enable signals for easy depth expansion
鈥?Clock Control, registered, address, data, and control
鈥?ZZ Pin for automatic power-down
鈥?JEDEC-standard 119-Bump BGA package
-11
Pipeline
3-1-1-1
Flow Through
2-1-1-1
t
Cycle
t
KQ
I
DD
t
KQ
t
Cycle
I
DD
10 ns
4.5 ns
210 mA
11 ns
15 ns
150 mA
-100
10 ns
4.5 ns
210 mA
12 ns
15 ns
150 mA
-80
12.5 ns
4.8 ns
190 mA
14 ns
15 ns
130 mA
-66
15 ns
5 ns
170 mA
18 ns
20 ns
130 mA
8Mb Pipelined and Flow Through
100 MHz鈥?6 MHz
3.3 V V
DD
Synchronous NBT SRAMs
2.5 V and 3.3 V V
DDQ
Functional Description
The GS882Z818/36B is an 8Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS882Z818/36B may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS882Z818/36B is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
Standard 119-bump BGA package.
Flow Through and Pipelined NBT SRAM Back-to-Back Read/Write Cycles
Clock
Address
Read/Write
A
R
B
W
Q
A
C
R
D
B
Q
A
D
W
Q
C
D
B
E
R
D
D
Q
C
F
W
Q
E
D
D
Q
E
Flow Through
Data I/O
Pipelined
Data I/O
Rev: 1.15 6/2001
1/34
漏 1998, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.

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