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GS8320Z18GT-225T Datasheet

  • GS8320Z18GT-225T

  • 36Mb Pipelined and Flow Through Synchronous NBT SRAM

  • 24頁

  • ETC

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Preliminary
GS8320Z18/36T-250/225/200/166/150/133
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
鈥?NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM鈩? NoBL鈩?and
ZBT鈩?SRAMs
鈥?2.5 V or 3.3 V +10%/鈥?0% core power supply
鈥?2.5 V or 3.3 V I/O supply
鈥?User-configurable Pipeline and Flow Through mode
鈥?LBO pin for Linear or Interleave Burst mode
鈥?Pin compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices
鈥?Byte write operation (9-bit Bytes)
鈥?3 chip enable signals for easy depth expansion
鈥?ZZ Pin for automatic power-down
鈥?JEDEC-standard 100-lead TQFP package
鈥?Pb-Free 100-lead TQFP package available
36Mb Pipelined and Flow Through
Synchronous NBT SRAMs
250 MHz鈥?33 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8320Z18/36T may be configured by the user to operate
in Pipeline or Flow Through mode. Operating as a pipelined
synchronous device, meaning that in addition to the rising edge
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8320Z18/36T is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
Functional Description
The GS8320Z18/36T is a 36Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
-250 -225 -200 -166 -150 -133 Unit
2.5 2.7 3.0 3.5 3.8 4.0 ns
4.0 4.4 5.0 6.0 6.6 7.5 ns
285
350
6.5
6.5
205
235
265
320
7.0
7.0
195
225
245
295
7.5
7.5
185
210
220 210 185 mA
260 240 215 mA
8.0 8.5 8.5 ns
8.0 8.5 8.5 ns
175 165 155 mA
200 190 175 mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.03 10/2004
1/24
漏 2001, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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