Pb Free Plating Product
ISSUED DATE :2006/02/06
REVISED DATE :
GS152B
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-20V
300m
-0.7A
The GS152B provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The GS152B is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Description
Features
*Low On-State Resistance:0.3 艁 (max)
*Ultra High Speed Switching
Applications
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery System
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Pulsed Drain Current
1,2
Power Dissipation
Linear Derating Factor
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Operating Junction and Storage Temperature Range
Ratings
-20
鹵12
-0.7
-2.8
0.35
0.0028
-55 ~ +150
Value
360
Unit
V
V
A
A
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
GS152B
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