GP801DCS18
GP801DCS18
Chopper Switch Low V
CE(SAT)
IGBT Module
DS5235-3.0 January 2001
FEATURES
s
s
s
s
s
Low V
CE(SAT)
Non Punch Through Silicon
Isolated Copper Baseplate
Low Inductance Internal Construction
800A Per Module
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1800V
2.6V
800A
1600A
APPLICATIONS
s
s
s
s
s
High Reliability Inverters
Motor Controllers
Traction Drives
Resonant Converters
Choppers
2(C
2
)
4(E
2
)
1(E
1
)
7(C
1
)
5(E
1
)
6(G
1
)
3(C
1
)
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP801DCS18 is an 1800V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module.
Designed with low V
CE(SAT)
to minimise conduction losses, the
module is of particular relevance in low to medium frequency
applications. The IGBT has a wide reverse bias safe operating
area (RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Dual switch circuit diagram
ORDERING INFORMATION
Order As:
GP801DCS18
Note: When ordering, please use the whole part number.
GPxxxDCxxx-xxx
Outline type code:
D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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