GP800NSS33
GP800NSS33
Single Switch IGBT Module
Preliminary Information
Replaces February 2000 version, DS5358-2.0
DS5358-2.1 March 2001
FEATURES
s
s
s
Non Punch Through Silicon
Isolated Copper Baseplate with AL
2
O
3
Substrate
Low Inductance Internal Construction
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
3300V
3.6V
800A
1600A
APPLICATIONS
s
s
s
s
High Power Inverters
Motor Controllers
Induction Heating
Resonant Converters
Aux C
External connection
C1
C2
The Powerline range of high power modules includes dual,
half bridge and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP800NSS33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
G
Aux E
E1
E2
External connection
Fig. 1 Single switch circuit diagram
C
1
ORDERING INFORMATION
Order As:
GP800NSS33
Note: When ordering, please use the whole part number.
E
2
G
E1
C1
E2
C2
E
2
- Aux Emitter
C
1
- Aux Collector
Outline type code:
N
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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