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GP400LSS12 Datasheet

  • GP400LSS12

  • Single Switch IGBT Module

  • 135.00KB

  • 10頁

  • DYNEX

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GP400LSS12
GP400LSS12
Single Switch IGBT Module
Replaces February 2000 version, DS5306-1.2
DS5306-2.3 November 2000
FEATURES
s
s
s
s
s
Non Punch Through Silicon
Isolated Copper Baseplate
Low Inductance Internal Construction
1200V Rating
400A Per Module
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1200V
2.7V
400A
800A
APPLICATIONS
s
s
s
s
High Power Inverters
Motor Controllers
5(E
1
)
2(E)
Induction Heating
Resonant Converters
3(G
1
)
1(C)
4(C
1
)
The Powerline range of high power modules includes half
bridge and single switch configurations covering voltages from
600V to 3300V and currents up to 4800A.
The GP400LSS12 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Single switch circuit diagram
4
5
3
2
1
ORDERING INFORMATION
Order As:
GP400LSS12
Note: When ordering, please use the compete part number.
Outline type code:
L
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com

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