GP201MHS18
GP201MHS18
Low V
CE(SAT)
Half Bridge IGBT Module
DS5290-2.1 January 2001
FEATURES
s
s
s
s
s
Low V
CE(SAT)
Non Punch Through Silicon
Isolated Copper Baseplate
Low Inductance Internal Construction
200A Per Arm
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1800V
2.6V
200A
400A
APPLICATIONS
s
s
s
s
11(C
2
)
1(E
1
C
2
)
2(E
2
)
6(G
2
)
7(E
2
)
3(C
1
)
5(E
1
)
4(G
1
)
High Reliability Inverters
Motor Controllers
Traction Drives
Resonant Converters
9(C
1
)
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP201MHS18 is a half bridge 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V
CE(SAT)
to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
11
10
8
9
Fig. 1 Half bridge circuit diagram
1
2
3
6
7
5
4
ORDERING INFORMATION
Order As:
GP201MHS18
Note: When ordering, please use the complete part number.
Outline type code:
M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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