GP200MLK12
GP200MKS12
IGBT Chopper Module
Preliminary Information
DS5448-1.2 April 2001
FEATURES
s
s
s
s
Internally Configured With Upper Arm Controlled
Non Punch Through Silicon
Isolated Copper Baseplate
Low Inductance Internal Construction
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1200V
2.7V
200A
400A
APPLICATIONS
s
s
s
s
s
High Power Choppers
Motor Controllers
Induction Heating
Resonant Converters
Power Supplies
1(A,E)
2(K)
3(C)
5(E
1
)
4(G)
9(C
1
)
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP200MLS12 is a 1200V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the upper arm of the bridge controlled. The
module incoporates high current rated freewheel diodes. The
IGBT has a wide reverse bias safe operating area (RBSOA)
ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
11
10
8
9
Fig. 1 Chopper circuit diagram
1
2
3
6
7
5
4
ORDERING INFORMATION
Order As:
GP200MKS12
Note: When ordering, please use the whole part number.
Outline type code:
M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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