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GP200MHS18 Datasheet

  • GP200MHS18

  • Half Bridge IGBT Module

  • 10頁

  • DYNEX

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GP200MHS18
GP200MHS18
Half Bridge IGBT Module
DS5304-3.1 January 2001
FEATURES
s
s
s
s
Non Punch Through Silicon
Isolated Copper Baseplate
Low Inductance Internal Construction
200A Per Arm
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1800V
3.5V
200A
400A
APPLICATIONS
s
s
s
s
High Power Inverters
Motor Controllers
Induction Heating
Resonant Converters
11(C
2
)
1(E
1
C
2
)
2(E
2
)
6(G
2
)
7(E
2
)
3(C
1
)
5(E
1
)
4(G
1
)
9(C
1
)
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP200MHS18 is a half bridge 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
GP200MHS18
Note: When ordering, please use the whole part number.
11
10
8
9
1
2
3
6
7
5
4
Outline type code:
M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com

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