GP1S39
GP1S39
s
Features
1. Ultra-compact package
2. PWB mounting type
3. Double-phase phototransistor output type
for detecting of rotation direction and count
4. Wide gap between light emitter and
detector: 1.5mm
5. Slit width: 0.8mm
6. Detecting pitch: 0.6mm
Subminiature, Double-phase
Output, Wide Gap
Photointerrupter
s
Outline Dimensions
1
2
PT1
PT2
( Unit : mm )
5
4
3
1
2
3
4
5
Anode
Cathode
Emitter2
Emitter1
Collector
Internal connection diagram
4.5
1.5
Center of light path
(0.7)
1.5
B
A
4.0
1.5
(C0.4)
3.5
(0.7)
(C0.3)
0.15
+
0.2
-
0.1
g
3.14
5
1
0.4
g
1.27
4.0
MIN.
g
1.27
A-A' section
Slit width of
emitter side
(0.8)
s
Applications
1. Mouses
2. Cameras
B'
A'
Rest of gate
(2)
B-B' section
(1.0 )
(0.37)
(0.37)
4
3
2
s
Absolute Maximum Ratings
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
*1 For 5 seconds
( Ta = 25藲C )
Rating
50
6
75
35
6
20
75
100
- 25 to + 85
- 40 to + 100
260
Unit
mA
V
mW
V
V
mA
mW
mW
藲C
藲C
藲C
*
Tolerance:鹵 0.2mm
*
Burr's dimensions: 0.15MAX.
*
Rest of gate: 0.3MAX.
*
( )
:
Reference dimensions
*
The dimensions indicated by
g
refer
to those measured from the lead base.
*
Internal elements are appeared because of thin external mold
resin marked
Input
Output
I
C
P
C
P
tot
T
opr
T
stg
T
sol
Soldering area
鈥?/div>
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.鈥?/div>
1mm or more
Symbol
I
F
V
R
P
V
CE1O
V
CE2O
V
E 1CO
V
E 2CO
4.7
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