GP1S30
GP1S30
s
Features
1. Compact package
2. PWB mouning type
3. Double-phase phototransistor output type for
detecting of rotation direction and count
4. Detecting pitch : 0.6mm
Subminiature Photointerrupter
s
Outline Dimensions
1
2
1 Anode
2 Cathode
AA'Section
Slit width of
emitter side
( Unit : mm )
Internal connection diagram
PT1
PT2
5
4
3
s
Applications
1. Mouses
2. Cameras
3.8
1.45
Center of
light path
B
(0.8)
0.9
A
(C0.6)
3 Emitter2
4 Emitter1
5 Collector
BB'Section
4.0
(1.0)
2
-
(0.37)
2.5
(1.0)
4.0
g
2.54
5
1
g
1.27
g
1.27
4
3
2
*
Tolerance
:鹵
0.2mm
*
Burr's dimensions: 0.15MAX.
*
Rest of gate
:
0.3MAX.
*
( )
:
Reference dimensions
*
The dimensions indicated by
g
refer
to those measured from the lead base.
s
Absolute Maximum Ratings
Prameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Output
Emitter-collector Voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
*1 For MAX. 5 seconds
( Ta = 25藲C )
Symbol
I
F
V
R
P
V
CE 1O
V
CE 2O
V
E 1CO
V
E 2CO
I
C
P
C
P
tot
T
opr
T
stg
T
sol
Rating
50
6
75
35
6
20
75
100
- 25 to + 85
- 40 to + 100
260
Unit
mA
V
mW
V
V
mA
mW
mW
藲C
藲C
藲C
1mm or more
Soldering area
Input
鈥?/div>
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.鈥?/div>
4.0
MIN.
B'
A'
(C0.3) Rest of gate
(2)
5- 0.15
+
0.2
5
-
0.4
-
0.1
5.0
1
2
3
4
