GP1200ESM33
GP1200ESM33
High Reliability Single Switch IGBT Module
Advance Information
Replaces July 2000 version, DS5308-1.6
DS5308-2.1 February 2001
FEATURES
s
s
s
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
3300V
3.4V
1200A
2400A
APPLICATIONS
s
s
s
s
High Reliability Inverters
C1
Motor Controllers
Traction Drives
Resonant Converters
Aux C
External connection
C2
C3
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP1200ESM33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
G
Aux E
E1
E2
External connection
Fig. 1 Single switch circuit diagram
E3
ORDERING INFORMATION
Order As:
GP1200ESM33
Note: When ordering, please use the whole part number.
Outline type code:
E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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