GaAs MMICs
GN8062
GN8062
GaAs IC
For semiconductor laser drive
s
Features
q
q
q
1
2
3
4
6.4鹵0.2
8
7
6
5
Unit : mm
High output
Pulse current and DC bias current can be controlled.
10max.
2.54鹵0.25
High-speed switching
0.7min.
4.5max. 4.0max.
s
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power supply voltage
Symbol
V
DD
V
SS
V
IN
Pin voltage
V
Ip * 5
V
OUT* 1
Power current
Output current
Allowable power dissipation
Channel temperature
Storage temperature
Operating ambient temperature
*1
*2
*3
*4
*5
Rating
6
鈥?
鈥?0.5 to V
DD
鈥?.5
1.5 to V
DD
V
DD
50
40
145
700
150
鈥?55 to +150
鈥?0 to +75
Unit
V
V
0 to 15藲
7.62鹵0.2
V
V
V
mA
mA
mA
mW
藲C
藲C
藲C
I
DD
I
SS
*4
1 : GND
2 : NC
3 : NC
0.35max.
4 : OUT
5 : V
IP
6 : V
DD
7 : V
IN
8 : V
SS
8-Lead Plastic DIL Package
I
OUT
P
D* 2
T
ch
T
stg
T
opr* 3
Do not apply the voltage higher than the set V
DD
.
Guaranteed value of the unit at Ta= 25藲C.
Range in which the IC circuit function operates and not the guaranteed range of
electric characteristics.
I
DD
is a current when the pulse output current is zero.
Voltage when the constant current source has been connected.
s
Electrical Characteristics
(Ta = 25藲C)
Parameter
Pulse output current
Supply current
Input voltage
Rise time
Fall time
Symbol
I
pmax.
I
pmin.
I
DD* 1
I
SS
V
IH
V
IL
t
r* 2
t
f* 2
3
3
V
DD
= 5V, V
SS
= 鈥?5V, I
p
=100mA
R
L
=10鈩?/div>
Test circuit
1
1
2
2
Condition
V
DD
= 5V, V
SS
= 鈥?V, V
IN
= 2V, I
p
=120mA, R
L
=10鈩?/div>
V
DD
= 5V, V
SS
= 鈥?V, V
IN
= 0.4V, I
p
=120mA, R
L
=10鈩?/div>
V
DD
= 5V, V
SS
= 鈥?5V, V
IN
= 0.4V
I
p
= 0, R
L
=10鈩?/div>
2.5
0.4
7
5
Min
100
Typ
120
1
35
25
5
50
40
Max
Unit
mA
mA
mA
mA
V
V
ns
ns
1.3typ.
0.5
1
2
3
