GaAs MMICs
GN8061
GN8061
GaAs IC
For semiconductor laser drive
s
Features
q
q
q
1
2
3
4
6.4鹵0.2
8
7
6
5
Unit : mm
High output
Pulse current and DC bias current can be controlled.
10max.
2.54鹵0.25
High-speed switching
0.7min.
4.5max. 4.0max.
s
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power supply voltage
Symbol
V
DD
V
SS
V
Ib1* 1
V
Ib2
Pin voltage
V
IN
V
Ip
*5
*1
Rating
6
鈥?
6
0.5
鈥?0.5 to V
DD
鈥?.5
1.5 to 6
6
55
40
225
700
150
鈥?55 to +150
鈥?0 to + 75
Unit
V
V
0 to 15藲
7.62鹵0.2
V
V
V
V
V
mA
mA
mA
mW
藲C
藲C
藲C
1 : GND
2 : V
Ib1
3 : V
Ib2
0.35max.
4 : OUT
5 : V
IP
6 : V
DD
7 : V
IN
8 : V
SS
8-Lead Plastic DIL Package
V
OUT
Power current
Output current
Allowable power dissipation
Channel temperature
Storage temperature
Operating ambient temperature
*1
*2
*3
*4
*5
I
DD* 4
I
SS
I
OUT
P
D* 2
T
ch
T
stg
T
opr* 3
Do not apply the voltage higher than the set V
DD
.
Guaranteed for the unit in the natural atmosphere.
IC circuit functioning range. Note however that the electrical characteristics shown
at Ta= 25藲C is not guaranteed.
I
DD
is a current when the pulse output current and bias output current are zero.
Voltage when the constant current source has been connected.
s
Electrical Characteristics
(Ta = 25藲C)
Parameter
Pulse output current
Symbol
I
pmax.
I
pmin.
I
bmax.
Bias output current
I
bmin. 1
I
bmin. 2
Supply current
Input voltage
Rise time
Fall time
I
DD
I
SS
V
IH
V
IL
t
r* 2
t
f* 2
3
3
V
Ib1
= 0, V
Ib2
鈥?5V, I
P
=100mA
*1
Test circuit
1
1
2
2
2
2
2
Condition
V
IN
= 2.0V, V
Ib2
= 鈥?5V
V
IN
= 0.4V, V
Ib2
= 鈥?5V
I
P
= 0, V
Ib1
= 5V, V
Ib2
= 0
I
P
= 0, V
Ib1
= 0, V
Ib2
= 0
I
P
= 0, V
Ib1
= 5V, V
Ib2
= 鈥?5V
V
Ib1
= 5V, V
Ib2
= 鈥?5V, V
IN
= 0.4V
I
P
= 0
Min
100
80
Typ
120
1
100
1
0.05
35
25
Max
5
5
0.1
55
40
0.4
7
5
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
ns
ns
2.5
Note : Following condition is applied unless otherwise specified: V
DD
= 5V, V
SS
= 鈥?5V, V
Ib1
= 0V, V
Ib2
= 0V
Set the supply current of constant current source to I
P
=120mA and load resistance to R
L
next
1
2
3
4
5
