GaAs MMICs
GN01081B
GaAs IC (with built-in ferroelectric)
Driver amplifier for PCS
unit: mm
10-0.2
鈥?.05
+0.1
8-0.5鹵0.07
1
2
3
4
5
11
2-12藲
2.8鹵0.2
12-0~0.2
2~12藲
9
8
7
6
1.1鹵0.2
s
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Power supply voltage
Circuit current
Max input power
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DD
I
DD
P
in
P
D
T
opr
T
stg
Ratings
8
100
鈭?
450
鈭?0
to +90
鈭?0
to +120
Unit
V
mA
dBm
mW
擄C
擄C
Part A
3.45鹵0.1
2.2鹵0.2
3.4鹵0.2
0.3鹵0.1
1: NC
7: V
DD1
2: V
DD2
8: NC
3: Source2 9: IN1
4: IN2
10: NC
5: NC
11: GND
6: NC
12: GND
ESOF-10D Type Package
s
Electrical Characteristics
(V
DD
= 3.0V, f = 1880MHz, Pout = 11.0dBm, Ta = 25 鹵 3擄C)
Parameter
Circuit current
Power gain
Adjacent channel
leakage power (ACP) 1
Adjacent channel
leakage power (ACP) 2
Symbol Test method
I
DD
PG
ACP1
(1)
(1)
(1)
(2)
(1)
(2)
IS
鈭?/div>
95 modulation, 鹵1.25MHz Detuning
30kHz Bandwidth
IS
鈭?/div>
95 modulation, 鹵2.25MHz Detuning
30kHz Bandwidth
22
Conditions
min
typ
60
25
鈭?6
鈭?1
max
75
27
鈭?1
鈭?6
Unit
mA
dB
dBc
ACP2
dBc
Test method (1): Measurement circuit is shown in the following diagram.
(2): This item is the sampling guaranteed item.
s
Measurement Circuit
V
DD1
5.6nH
20鈩?/div>
2pF
5.6nH
100pF+1000pF
150鈩?/div>
IN
2pF
10 9 8 7 6
12
11
1.5nH
1.5nH
1 2 3 4 5
33pF
OUT
33nH
100pF
10鈩?/div>
1pF
100pF+47nF
V
DD2
10-0.15鹵0.05
2-0.55鹵0.1
2~12藲
Detail of Part A & B
4.0鹵0.2
q
High output amplifier
q
Low distortion
10
2-12藲
s
Features
Part B
12
1
next
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