GaAs MMICs
GN01038B
GaAs IC (with built-in ferroelectric)
For the preamplifier of the transmitting section in a cellular phone
unit: mm
s
Features
q
Low-noise amplifier with AGC
q
Operated by a single positive power supply
q
Low distortion characteristics
2.8
鈥?.3
0.65鹵0.15
6
1.9鹵0.1
0.95
0.95
+0.2
+0.25
1.5
鈥?.05
0.65鹵0.15
1.45鹵0.1
0.3
鈥?.05
+0.1
2.9
鈥?.05
+0.2
5
2
4
3
s
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Power supply voltage
Gate control voltage
Circuit current
Max input power
Allowable power dissipation
Operating temperature
Storage temperature
Symbol
V
DD
V
AGC
I
DD
P
in
P
D
T
opr
T
stg
Ratings
8
0 to 2
40
鈭?
0.2
鈭?0
to +90
鈭?0
to +120
Unit
1.1
鈥?.1
+0.2
V
V
mA
dBm
W
擄C
擄C
1: Source 4: V
AGC
2: GND
5: GND
3: V
DD
6: RF IN
EIAJ: SC-74
Mini Type Package (6-pin)
s
Electrical Characteristics
(V
DD
= 3V, Ta = 25 鹵 2擄C)
Parameter
Circuit current
Symbol Test method
I
D
PG
1
Power gain
PG
2
PG
3
PG
4
Dynamic range
Modulation distortion
DR
1
DR
2
DM
(1), (3)
(1), (2)
Conditions
V
AGC
= 1.5V
V
AGC
= 1.5V, f = 948MHz
V
AGC
= 0V, f = 948MHz
V
AGC
= 1.5V, f = 1441MHz
V
AGC
= 0V, f = 1441MHz
PG
1
鈭?/div>
PG
2
PG
3
鈭?/div>
PG
4
Marking Symbol: ID
min
8
10
12
鈭?7
7
11
鈭?3
33
28
39
34
鈭?8
鈭?0
鈭?5
鈭?0
typ
max
20
Unit
mA
dB
dB
dB
dB
dB
dB
dBc
(1), (2), (3) V
AGC
= 1.5V, f = 948MHz
Test method (1): The measurement circuit diagram is shown below. Input power (P
in
) =
鈭?5dBm.
(2): Items for sampling control. (AQL = 0.65%)
(3): Design-guaranteed items.
(4): 21kHz bandwidth at 鹵50kHz detuning.
(5): The source pin (Pin No. 1) should be open or should be connected to the GND through a capacitor.
s
Measurement Circuit
V
AGC
R
4
C
5
RF IN
C
6
G N 0 1 0 3 8 B
(Component values)
C = 100pF
R = 4.7k鈩?/div>
L = 8.2nH
RF OUT
C
3
2
1
L
C
V
DD
0 to 0.05
0.1 to 0.3
0.4鹵0.2
0.8
0.16
鈥?.06
0.5
鈥?.05
1
+0.1
+0.1
1
1
2
