GM71V16403C
GM71VS16403CL
4,194,304 WORDS x 4 BIT
CMOS DYNAMIC RAM
Description
The GM71V(S)16403C/CL is the new
generation dynamic RAM organized 4,194,304
words x 4 bit. GM71V(S)16403C/CL has
realized higher density, higher performance and
various functions by utilizing advanced CMOS
process technology. The GM71V(S)16403C/CL
offers Extended Data Out (EDO) Page Mode as
a high speed access mode. Multiplexed address
inputs permit the GM71V(S)16403C/CL to be
packaged in a standard 300 mil 24(26) pin SOJ,
and a standard 300 mil 24(26) pin plastic TSOP
II. The package size provides high system bit
densities and is compatible with widely available
automated testing and insertion equipment.
System oriented features include single power
supply 3.3V +/- 0.3V tolerance, direct
interfacing capability with high performance
logic families such as Schottky TTL.
Features
* 4,194,304 Words x 4 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (3.3V +/- 0.3V)
* Fast Access Time & Cycle Time
(Unit: ns)
t
RAC
t
CAC
GM71V(S)16403C/CL-5
GM71V(S)16403C/CL-6
GM71V(S)16403C/CL-7
50
60
70
13
15
18
t
RC
84
104
124
t
HPC
20
25
30
* Low Power
Active : 324/288/252mW (MAX)
Standby : 7.2mW (CMOS level : MAX)
: 0.36mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 4096 Refresh Cycles/64ms
* 4096 Refresh Cycles/128ms (L-version)
* Self Refresh Operation (L-version)
* Battery Backup Operation (L-version)
* Test Function : 16bit parallel test mode
Pin Configuration
24(26) SOJ
V
CC
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
26
25
24
23
22
21
24(26) TSOP II
V
SS
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
CC
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
26
25
24
23
22
21
V
SS
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
8
9
10
11
12
13
19
18
17
16
15
14
8
9
10
11
12
13
19
18
17
16
15
14
(Top View)
Rev0.1/Apr鈥?1