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GM6718

Description

1/3

NPN EPITAXIAL PLANAR TRANSISTOR

T

he GM6718 is designed for general purpose medium power amplifier and switching.

Package Dimensions

REF.

A

B

C

D

E

F

Millimeter

Min.

Max.

4.4

4.6

4.05

4.25

1.50

1.70

1.30

1.50

2.40

2.60

0.89

1.20

REF.

G

H

I

J

K

L

M

Millimeter

Min.

Max.

3.00 REF.

1.50 REF.

0.40

0.52

1.40

1.60

0.35

0.41

5 q TYP.

0.70 REF.

Absolute Maximum Ratings at Ta = 25 :

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Symbol

Tj

Tstg

VCBO

VCEO

VEBO

IC

PD

Ratings

+150

-55 ~ +150

100

100

5

1

1

V

V

V

A

W

Unit

Characteristics

Symbol

BVCBO

BVCEO

BVEBO

ICBO

*VCE(sat)

*hfe1

*hfe2

*hfe3

Cob

fT

at Ta = 25 :

Min.

100

100

5

-

-

80

100

20

-

50

Typ.

-

-

-

-

-

-

-

-

-

-

Max.

-

-

-

100

350

-

310

-

20

-

pF

MHz

Unit

V

V

V

nA

mV

IC=100uA , IE=0

IC=1mA. IB=0

IE=10uA, IC=0

VCB=80V

IC=350mA, IB=35mA

VCE=1V, IC=50mA

VCE=1V, IC=250mA

VCE=1V, IC=500mA

VCB=10V, f=1MHz

VCE=10V, IC=50mA, f=100MHz

Test Conditions

*Pulse Test:Pulse width 380us,Duty Cycle 2%

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  NPN EPITAXIAL PLANAR TRANSISTOR
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