High-luminosity(InGaN) Leadless Chip LED
GM1BC35200AC/GM1GC35200AC
GM1BC35200AC/GM1GC35200AC
I
Outline Dimensions
(Unit : mm)
1608 Size, 0.35mm Thickness, Super
Thin Type Leadless Chip LED
I
Directive Characteristics
-20藲
-40藲
0藲
100
Relative luminous intensity(%)
(T
a
=25藲C)
+20藲
+40藲
1.6鹵0.15
(0.2)
0.8鹵0.15
0.35
80
60
+60藲
40
20
0
X
-60藲
1
2
Emisson center
-80藲
Recommended PWB pattern for soldering
1.2
1.0
Soldering area Device center
+80藲
0.35
Epoxy resin
-20藲
0.8
0藲
100
Relative luminous intensity(%)
+20藲
+40藲
-40藲
0.8
PWB
(0.3)
(0.3)
0.85
0.8
80
60
+60藲
40
20
0
Y
1.Plating area
Resist
2.Pin connections
1 Cathode
1
2 Anode
chip side mark
3.Unspecified tolerance:鹵0.1
-60藲
2
-80藲
+80藲
I
Absolute Maximum Ratings
Model No. Emitting color
Material
(T
a=
25藲C)
Power dissipation Forward current Peak forward current Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature
(mA/C)
P
I
F
I
FM*1
V
R
T
opr
T
stg
T
sol*2
(藲C)
(藲C)
(藲C)
(mA)
(mA)
(V)
(mW)
DC Pulse
-20 to +80 -40 to +100
250
0.27 0.53
20
40
5
78
-20 to +80 -40 to +100
250
0.27 0.53
20
40
5
82
GM1BC35200AC
Blue
InGaN
GM1GC35200AC
Green
InGaN
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on page 2.
I
Electro-optical Characteristics
Forward voltage
V
F
(V)
TYP
Colorless
GM1BC35200AC
transparency
GM1GC35200AC
3.2
3.7
MAX
3.9
4.1
Peak emission
wavelength
位
p
(nm)
TYP
470
518
Dominant
wavelength
位
d
(nm)
TYP
472
525
Luminous
intensity
I
V
(mcd)
TYP
13
54
Spectrum radiation
bandwidth
鈭單?nm)
TYP
26
36
(I
F
=10mA,T
a
=25藲C)
Reverse current
I
R
(碌A(chǔ))
MAX
100
100
V
R
(V)
4
4
Page for
characteristics
diagrams
61
61
Lens type
Model No.
22
Notice
Internet
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