CORPORATION
GM195A
Description
The GM195A is designed for medium power amplifier applications.
ISSUED DATE :2006/06/07
REVISED DATE :
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Features
&
Amp continuous current
1
Package Dimensions
&Complementary to GM194A
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
-40
-40
-5
-1
-2
1
Unit
:
:
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
*h
FE
5
fT
Cob
Min.
-40
-40
-5
-
-
-
-
-
-
-
-
300
300
250
160
30
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
, unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=-100uA , I
E
=0
-
V
I
C
=-10mA, I
B
=0
-
V
I
E
=-100uA ,I
C
=0
-100
nA
V
CB
=-30V, I
E
=0
-100
nA
V
CES
=-30V
-100
nA
V
EB
=-4V, I
C
=0
-0.2
V
I
C
=-100mA, I
B
=-1mA
-0.35
V
I
C
=-500mA, I
B
=-20mA
-0.5
V
I
C
=-1A, I
B
=-100mA
-1.1
V
I
C
=-1A, I
B
=-50mA
-1.0
V
V
CE
=-5V, I
C
=-1A
-
V
CE
=-5V, I
C
=-1mA
900
V
CE
=-5V, I
C
=-100mA
-
V
CE
=-5V, I
C
=-500mA
-
V
CE
=-5V, I
C
=-1A
-
V
CE
=-5V, I
C
=-2A
-
MHz
V
CE
=-10V, I
C
=-50mA, f=100MHz
10
pF
V
CB
=-10V, I
E
=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
GM195A
Page: 1/2
1
2
