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Pb Free Plating Product

CORPORATION

GM161

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

ISSUED DATE :2004/11/03

REVISED DATE :2005/07/21B

BV

DSS

R

DS(ON)

I

D

20V

50m

5.3A

The GM161 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

Description

Features

&

Capable of 2.5V gate drive !

&Lower on-resistance

&Reliable and Rugged

Applications

&

Notebook PCs

&Cellular and portable phones

&On-board power supplies

&Li-ion battery Systems

Package Dimensions

SOT-89

REF.

A

B

C

D

E

F

Millimeter

Min.

Max.

4.4

4.6

4.05

4.25

1.50

1.70

1.30

1.50

2.40

2.60

0.89

1.20

REF.

G

H

I

J

K

L

M

Millimeter

Min.

Max.

3.00 REF.

1.50 REF.

0.40

0.52

1.40

1.60

0.35

0.41

5 q TYP.

0.70 REF.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current ,V

GS@4.5V

Continuous Drain Current ,V

GS@4.5V

Pulsed Drain Current

Power Dissipation

Operating Junction and Storage Temperature Range

Linear Derating Factor

1,2

3

3

Symbol

V

DSS

V

GS

Ratings

20

f 12

5.3

4.3

10

2

-55 ~ +150

0.01

Unit

V

V

A

A

A

W

W/

I

D @Ta=25 :

I

D @Ta=70 :

I

DM

P

D@Ta=25 :

Tj, Tstg

Thermal Data

Parameter

3

Symbol

Max.

Ratings

90

Unit

/W

Thermal Resistance Junction-ambient

Rthj-amb

1/4

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GM161相關(guān)型號(hào)PDF文件下載

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  描述
  廠商
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  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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  GM161
• GM161
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