CORPORATION
GM1386
Description
PNP E PITAX I AL P L ANAR T RANS ISTO R
The GM1386 is an epitaxial planar type PNP silicon transistor.
ISSUED DATE :2004/02/09
REVISED DATE :2005/08/24B
Features
&
collector saturation voltage : V
CE (sat)
= -0.35V(Typ.) @ I
C
/I
B
=-4A/-0.1A
Low
Package Dimensions
&Excellent DC current gain characteristics.
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
1
Collector Current (Pulse)*
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
-30
-20
-6
-5
-10
2
0.5 (2.0* )
Unit
V
V
V
A
A
W
* 1. Single pulse, PW=10ms.
* 2. When mounted on a 40*40*0.7 mm ceramic board.
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Min.
-30
-20
-6
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
120
60
,unless otherwise noted)
Max.
Unit
Test Conditions
-
V
I
C
=-50uA , I
E
=0
-
V
I
C
=-1mA, I
B
=0
-
V
I
E
=-50uA ,I
C
=0
-0.5
uA
V
CB
=-20V, I
E
=0
-0.5
uA
V
EB
=-5V, I
C
=0
-1.0
V
I
C
=-4A, I
B
=-100mA
390
V
CE
=-2V, I
C
=-500mA
-
MHz
V
CE
=-6V, I
E
=50mA, f=30MHz
-
pF
V
CB
=-20V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of h
FE
Rank
Range
P
82 ~ 180
Q
120 ~ 270
R
180 ~ 390
GM1386
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