CORPORATION
G M 11 8 8
Description
PNP SILICON EPITAXIAL TRANSISTOR
The GM1188 is designed for medium power amplifier applications.
ISSUED DATE :2005/07/19
REVISED DATE :2005/10/19B
Features
&
collector saturation voltage : V
CE(sat)
=-0.5V(Typ.)
Low
Package Dimensions
&Complementary pair with GM1766
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55~+150
-40
-32
-5
-2
0.5 (2.0*)
Unit
V
V
V
A
W
*When mounted on a 40x40x0.7mm ceramic board.
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Min.
-40
-32
-5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-500
-
150
50
,unless otherwise noted)
Max.
Unit
Test Conditions
-
V
I
C
=-50uA , I
E
=0
-
V
I
C
=-1mA, I
B
=0
-
V
I
E
=-50uA ,I
C
=0
-1
uA
V
CB
=-20V, I
E
=0
-1
uA
V
EB
=-4V, I
C
=0
-800
mV
I
C
=-2A, I
B
=-200mA
390
V
CE
=-3V, I
C
=-500mA
-
MHz
V
CE
=-5V, I
C
=-500mA, f=30MHz
-
pF
V
CB
=-10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of h
FE
Rank
Range
P
82 ~ 180
Q
120 ~ 270
R
180 ~ 390
1/2
1
2
