GL533
GL533
s
Features
1. Small spot light diameter for easy beam diaphragming
(TYP. :
蠁
0.6 mm)
2. High positional accuracy of optical axis (accuracy : 鹵 0.1 mm)
3. High output type (radiant flux
桅
e : TYP. 13mW)
4. Low peak forward voltage type
(peak forward voltage V
FM
: TYP. 2.0V)
5. PSD* Equivalent to peak sensitivity wavelength of detectors
(PD3101F and PD3151F)
(peak emission wavelength : TYP. 940 nm)
PSD * : Position Sensitive Device
High Speed Infrared Emitting
Diode for Camera AF
(Automatic Focusing)
s
Outline Dimensions
4.2
鹵
0.1
Transparent epoxy resin
(Refractive index 1.54)
Chip position 2.1
鹵
0.1
(Unit : mm)
Chip top face
position 0.07
0.3
1.1
2
-
蠁
0.45
鹵
0.1
2.5
鹵
0.3
(
g
)
蠁
5.4
1
2
(13.5 )
(2.3 )
1
2
1 Anode
2 Cathode
s
Applications
1. Cameras
1.
0
1.
0
g
Dimension at lead root
*
( ) : Reference dimensions
藲
45
(Ta=25藲C)
Rating
80
1
6
120
- 25 to +100
- 30 to +100
260
Unit
mA
A
V
mW
藲C
藲C
藲C
Parameter
Forward current
*1
Peak forward current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*2
Soldering temperature
*1 Pulse width <=100
碌
s, Duty ratio=0.01
Symbol
I
F
I
FM
V
R
P
T
opr
T
stg
T
sol
Soldering area
*2 For MAX. 3 seconds at the position of 1.3 mm from the bottom surface of resin
鈥?/div>
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
鈥?/div>
1.3mm
s
Absolute Maximum Ratings
1
2
