1. High speed response (response frequency : 40MHz)
2. Peak emission wavelength
p : TYP. 880 mm
3. Half intensity angle
鈭單?/div>
: 鹵 22藲
4. Lead bending type may be used.
High Speed Infrared Emitting Diode
s
Outline Dimensions
(Unit : mm)
2-C0.5
3.0
1.5
4.0
1.15
Transparent epoxy resin
R-1.25
(1.7)
1. AV equipment
2. Personal computers
3. Portable information terminal equipment
1
(2.54)
0.45
17.5
s
Applications
1.4
0.4
2
MIN0.5
1.55
2.8
1
2
1 Anode
2 Cathode
s
Absolute Maximum Ratings
Parameter
Forward current
*1
Peak forward current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*2
Soldering temperature
*1 Pulse width 100
碌
s, Duty ratio=0.01
*2 For MAX. 5 seconds at the position of 1.4 mm from the resin edge
(Ta=25藲C)
Unit
mA
A
V
mW
藲C
藲C
藲C
Symbol
Rating
I
F
50
0.5
I
FM
4
V
R
87.5
P
- 25 to + 85
T
opr
T
stg
- 40 to + 90
260
T
sol
鈥?/div>
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
鈥?/div>
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