GL4910
GL4910
s
Features
1. Small spot light diameter for easy beam diaphragming
(*Apparent emission diameter : TYP.
蠁
0.32 mm)
Side View Type Infrared Emitting
Diode for Camera AF
(Automatic Focusing)
s
Outline Dimensions
4.0
鹵
0.2
0.8
Gate burr
(Unit : mm)
2.0
鹵
0.2
0.8
Chip center
(2.5 )
R1.75
鹵
0.1
1.5
8藲
0.5
Pink
0.4
MAX.
0.8
2. Uniform emission intensity on chip emitting surface
3. Low peak forward voltage type
(Peak forward voltage V
FM
: TYP. 1.7V)
* Expansion range on lens surface of infrared emitted from chips
8藲
transparent
1
8藲
Solder dipping
range
2.15
5.0
鹵
0.2
epoxy resin
0.8
2- 0.28
2- 0.77
0.3
MIN.
(Chip position
8藲
: 2.65)
s
Applications
1. Cameras
17.15
+
1.5
-
1.0
2
-
0.45
+
0.2
-
0.1
2
-
0.4
+
-
0.2
0.1
1
2.54
2
2
1 Cathode
2 Anode
3.75
鹵
0.2
8藲
8藲
8藲
8藲
*
( ) : Reference dimensions
*
Tolerance :
鹵
0.15 mm
Parameter
Forward current
*1
Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2
Soldering temperature
Symbol
I
F
I
FM
V
R
T
opr
T
stg
T
sol
Rating
50
1
4
- 25 to + 60
- 40 to + 85
260
Unit
mA
A
V
藲C
藲C
藲C
120
碌
s
I
FM
500
碌
s
32ms (64 pulses)
1s (1 cycle)
Soldering area
*1 30,00 cycles max. on pulse conditions shown in the right drawing
*2 For 5 seconds at the position of 2.15 mm from the resin edge
鈥?/div>
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
鈥?/div>
2.15mm
s
Absolute Maximum Ratings
(Ta=25藲C)
1
2
3
4
