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Pb Free Plating Product

ISSUED DATE :2005/01/05

REVISED DATE :

G

I

03N70

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BV

DSS

R

DS(ON)

I

D

600V

4.0

3.3A

The G

I

03N70 is specially designed as main switching devices for universal 90~265VAC off-line AC/DC

converter applications.

The TO-251 package is available for low-profile applications and suited for AC/DC converters.

*Dynamic dv/dt Rating

*Simple Drive Requirement

*Repetitive Avalanche Rated

*Fast Switching Speed

Features

Package Dimensions

TO-251

REF.

A

B

C

D

E

F

Millimeter

Min.

Max.

6.40

6.80

5.20

5.50

6.80

7.20

7.20

7.80

2.30 REF.

0.60

0.90

REF.

G

H

J

K

L

M

Millimeter

Min.

Max.

0.50

0.70

2.20

2.40

0.45

0.55

0.45

0.60

0.90

1.50

5.40

5.80

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V

GS

@10V

Continuous Drain Current, V

GS

@10V

Pulsed Drain Current

1

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy

2

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and Storage Temperature Range

Symbol

V

DS

V

GS

I

D

@T

C

=25 :

I

D

@T

C

=100 :

I

DM

P

D

@T

C

=25 :

E

AS

I

AR

E

AR

Tj, Tstg

Ratings

600

鹵30

3.3

2.1

13.2

45

0.36

85

3.3

3.3

-55 ~ +150

Unit

V

V

A

A

A

W

W/ :

mJ

A

mJ

:

Thermal Data

Parameter

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

G

I

03N70

Max.

Max.

Symbol

Rthj-c

Rthj-a

Value

2.8

110

Unit

:

/W

: /W

Page: 1/5

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• GI03N70
  英文版
  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  GTM
  GI03N70
• GI03N70
  英文版
  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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