鈩?/div>
I
D
65A
N-Channel Enhancement-Mode MOSFET
0.265 (6.73)
0.255 (6.48)
CH
EN ET
T
R N
F
TO-251 (IPAK)
G
E
0.094 (2.39)
0.087 (2.21)
0.023 (0.58)
0.018 (0.46)
0.050 (1.27)
0.035 (0.89)
D
TM
G
0.214 (5.43)
0.206 (5.23)
S
D
Features
鈥?Advanced Trench Process Technology
鈥?High Density Cell Design for Ultra Low On-Resistance
鈥?Specially Designed for Low Voltage DC/DC Converters
and motor drives
鈥?Fast Switching for High Efficiency
0.245 (6.22)
0.235 (5.97)
G
S
Mechanical Data
0.375 (9.53)
0.350 (8.89)
Case:
JEDEC TO-251 molded plastic body
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250擄C/10 seconds at terminals
Weight:
0.011oz., 0.4g
0.035 (0.89)
0.028 (0.71)
0.102 (2.59)
0.078 (1.98)
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(1)
Pulsed Drain Current
Maximum Power Dissipation
T
C
= 25擄C
T
C
= 100擄C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
胃JC
R
胃JA
A
= 25擄C unless otherwise noted)
Limit
30
鹵
20
Unit
V
65
150
62.5
25.0
鈥?5 to 150
2.0
110
A
W
擄C
擄C/W
擄C/W
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Notes:
(1) Maximum DC current limited by the package.
Document Number 74575
17-Dec-01
www.vishay.com
1