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GFU25N03 Datasheet

  • GFU25N03

  • TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | ...

  • 41.22KB

  • 4頁

  • ETC

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GFU25N03
New Product
Vishay Semiconductor
V
DS
30V
R
DS(ON)
16.5
m
鈩?/div>
I
D
38A
N-Channel Enhancement-Mode MOSFET
0.265 (6.73)
0.255 (6.48)
CH
EN ET
T
R N
F
TO-251 (IPAK)
G
E
0.094 (2.39)
0.087 (2.21)
0.023 (0.58)
0.018 (0.46)
0.050 (1.27)
0.035 (0.89)
D
TM
G
0.214 (5.43)
0.206 (5.23)
S
D
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
Low Gate Charge
0.245 (6.22)
0.235 (5.97)
G
S
Mechanical Data
0.375 (9.53)
0.350 (8.89)
Case:
JEDEC TO-251 molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250擄C/10 seconds at terminals
Weight:
0.011oz., 0.4g
0.035 (0.89)
0.028 (0.71)
0.102 (2.59)
0.078 (1.98)
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
J
= 150擄C
Pulsed Drain Current
(1)
Power Dissipation
T
J
= 150擄C
T
C
= 25擄C
T
C
= 70擄C
T
A
= 25擄C
(2)
T
C
= 25擄C
T
C
= 70擄C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
胃JC
R
胃JA
C
= 25擄C unless otherwise noted)
Limit
30
Unit
V
鹵
20
38
30
80
38
24
2.5
鈥?5 to 150
3.3
50
A
W
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
(2)
Notes:
(1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1in
2
2 oz.. Cu PCB (FR-4 material)
擄C
擄C/W
擄C/W
Document Number 74572
17-Dec-01
www.vishay.com
1

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    TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | ...
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