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GFP50N03 Datasheet

  • GFP50N03

  • TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 50A I(D) | ...

  • 4頁

  • ETC

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上傳產(chǎn)品規(guī)格書

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GFP50N03
N-Channel Enhancement-Mode MOSFET
TO-220AB
0.415 (10.54)
Max.
0.154 (3.91)
Dia.
0.142 (3.60)
0.113 (2.87)
0.102 (2.56)
D
CH
EN ET
uct
T
R N
F
w Prod
Ne
G
E
TM
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
V
DS
30V
R
DS(ON)
13
m
鈩?/div>
I
D
50A
D
*
G
0.155 (3.93)
0.134 (3.40)
0.603 (15.32)
0.573 (14.55)
0.410 (10.41)
0.350 (8.89)
G
PIN
D
S
S
0.635 (16.13)
0.580 (14.73)
0.360 (9.14)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.104 (2.64)
0.094 (2.39)
Features
鈥?Dynamic dv/dt Rating 鈥?Repetitive Avalanche Rated
鈥?175擄C Operating Temperature 鈥?Ease of Paralleling
鈥?Fast Switching for High Efficiency
鈥?Simple Drive Requirements
0.160 (4.06)
0.09 (2.28)
0.560 (14.22)
0.530 (13.46)
Mechanical Data
0.037 (0.94)
0.026 (0.66)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.190 (4.83)
0.022 (0.56)
0.014 (0.36)
*
May be notched or flat
Dimensions in inches and (millimeters)
Case:
JEDEC TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Mounting Torque:
10 in-lbs maximum
Weight:
2.0g
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(1)
Pulsed Drain Current
Maximum Power Dissipation
T
C
= 25擄C
T
C
= 100擄C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
T
L
R
胃JC
R
胃JA
A
= 25擄C unless otherwise noted)
Limit
30
Unit
V
鹵
20
50
100
62.5
25
鈥?5 to 150
275
2.0
40
A
W
擄C
擄C
擄C/W
擄C/W
Operating Junction and Storage Temperature Range
Lead Temperature (1/8鈥?from case for 5 sec.)
Junction-to-Case
Junction-to-Ambient (PCB Mounted)
Note:
(1) Surface Mounted on FR4 Board, t
鈮?/div>
10 sec.
6/20/00

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