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Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(1)
Maximum Power Dissipation
T
C
= 25擄C
T
C
= 100擄C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
胃JC
R
胃JA
C
= 25擄C unless otherwise noted)
Limit
30
鹵
20
Unit
V
43
120
44.5
17.8
鈥?5 to 150
2.8
50
A
W
擄C
擄C/W
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
(2)
Note:
(1) Pulse width limited by maximum junction temperature
(2) 1-in
2
2oz. Cu PCB mounted
Document Number 74557
10-Dec-01
www.vishay.com
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