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GFB65N02 Datasheet

  • GFB65N02

  • TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 65A I(D) | ...

  • 4頁(yè)

  • ETC

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GFB65N02
N-Channel Enhancement-Mode MOSFET
CH
EN ET
T
REN
F
V
DS
20V
R
DS(ON)
8.5
m
鈩?/div>
I
D
65A
D
廬
G
TO-263AB
0.160 (4.06)
0.190 (4.83)
uct
rod
wP
Ne
0.045 (1.14)
0.055 (1.40)
G
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
S
0.42
(10.66)
0.320 (8.13)
0.360 (9.14)
G
PIN
D
S
0.575 (14.60)
0.625 (15.88)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.63
(17.02)
0.33
(8.38)
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.120 (3.05)
0.155 (3.94)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mounting Pad
Layout
Mechanical Data
Case:
JEDEC TO-263 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250擄C/10 seconds at terminals
Mounting Position:
Any
Weight:
1.3g
Features
鈥?Advanced Trench Process Technology
鈥?High Density Cell Design for Ultra Low On-Resistance
鈥?Specially Designed for Low Voltage DC/DC Converters
鈥?Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
J
= 150擄C
Pulsed Drain Current
(1)
Power Dissipation
T
J
= 150擄C
T
C
= 25擄C
T
C
= 100擄C
T
A
= 25擄C
(2)
T
C
= 25擄C
T
C
= 100擄C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
胃JC
R
胃JA
C
= 25擄C unless otherwise noted)
Limit
20
Unit
V
鹵
20
65
41
150
57
23
3.1
鈥?5 to 150
2.2
40
A
W
擄C
擄C/W
擄C/W
10/1/01
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Notes:
(1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1in
2
2oz. Cu PCB (FR-4 material)

GFB65N02相關(guān)型號(hào)PDF文件下載

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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 60A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 65A I(D) | ...
    ETC

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