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GF4953 Datasheet

  • GF4953

  • TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DS...

  • 5頁(yè)

  • ETC

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上傳產(chǎn)品規(guī)格書

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GF4953
Dual P-Channel Enhancement-Mode MOSFET
CH
EN ET
T
R N
F
E
V
DS
鈥?0V
R
DS(ON)
53
m
鈩?/div>
I
D
鈥?.9A
D1
8
D1
7
D2
6
D2
5
TM
G
5
SO-8
0.197 (5.00)
0.189 (4.80)
ct
odu
Pr
ew
N
Dimensions in inches
and (millimeters)
0.019 (0.48)
x 45
擄
0.010 (0.25)
Q1
Q2
1
S1
2
3
4
G2
8
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
1
4
G1 S2
0.05 (1.27)
0.04 (1.02)
0.245 (6.22)
Min.
0.009 (0.23)
0.007 (0.18)
0.165 (4.19)
0.155 (3.94)
0.050 (1.27)
0.020 (0.51)
0.013 (0.33)
0.069 (1.75)
0.053 (1.35)
0.009 (0.23)
0.004 (0.10)
0.035 (0.889)
0.025 (0.635)
0
擄
鈥?8
擄
0.050(1.27)
0.016 (0.41)
0.050 typ.
(1.27)
Mounting Pad Layout
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-
750,Method 2026
High temperature soldering guaranteed:
250擄C/10 seconds at terminals
Mounting Position:
Any
Weight:
0.5g
Features
鈥?Advanced Trench Process Technology
鈥?High Density Cell Design for Ultra Low
On-Resistance
鈥?Specially Designed for Low Voltage DC/DC
Converters
鈥?Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150擄C)
Pulsed Drain Current
Maximum Power Dissipation
(1)
T
A
= 25擄C
T
A
= 70擄C
T
A
= 25擄C
T
A
= 70擄C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
胃JA
A
= 25擄C unless otherwise noted)
Limit
鈥?0
Unit
V
鹵
20
鈥?4.9
鈥?3.9
鈥?30
2.0
1.3
鈥?5 to 150
62.5
A
W
擄C
擄C/W
7/10/01
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance
(1)
Note:
(1) Surface Mounted on FR4 Board, t
鈮?/div>
10 sec.

GF4953相關(guān)型號(hào)PDF文件下載

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  • 英文版
    TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DS...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DS...
    ETC

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