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GF4810 Datasheet

  • GF4810

  • TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | ...

  • 5頁

  • ETC

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GF4810
N-Channel MOSFET & Schottky Diode
SO-8
0.197 (5.00)
0.189 (4.80)
8
5
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
CH
EN ET
T
REN
F
oduct
G
New Pr
廬
Dimensions in inches
and (millimeters)
0.019 (0.48)
x 45
擄
0.010 (0.25)
MOSFET: V
DS
30V
R
DS(ON)
13.5
m
鈩?/div>
I
D
10A
Schottky: V
R
30V
V
F
0.53V
I
F
4.0A
K
8
D
7
D
6
D
5
1
A
2
S
3
S
4
G
1
4
Mounting Pad
Layout
0.245 (6.22)
Min.
0.05 (1.27)
0.04 (1.02)
0.165 (4.19)
0.155 (3.94)
0.050 (1.27)
0.020 (0.51)
0.013 (0.33)
0.069 (1.75)
0.053 (1.35)
0.009 (0.23)
0.004 (0.10)
0.009 (0.23)
0.007 (0.18)
0
擄
鈥?8
擄
0.050(1.27)
0.016 (0.41)
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:
0.5g
Features
鈥?/div>
Enhancement mode MOSFET and Schottky Diode in a
compact package
鈥?Advanced Trench Process Technology and high Density
Cell Design for Ultra Low On-Resistance
鈥?Suitable for Low Voltage DC/DC Converters
鈥?High performance Schottky diode with low V
F
and high I
F
A
Maximum Ratings and Thermal Characteristics
(T
MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150擄C)
(1)
Pulsed Drain Current
Continuous Source Current (MOSFET Diode Conduction)
(1)
Maximum Power Dissipation
(1)
T
A
= 25擄C
T
A
= 70擄C
T
A
= 25擄C
T
A
= 70擄C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
R
胃JA
= 25擄C unless otherwise noted)
Limit
30
鹵 20
10
8
50
2.3
2.3
1.5
鈥?5 to 150
55
Unit
V
A
W
擄C
擄C/W
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-to-Ambient
(1)
Schottky
Reverse Voltage
Maximum Power Dissipation
(1)
Average Forward Current
(1)
Pulsed Forward Current
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-to-Ambient
(1)
Notes:
(1) Surface Mounted on FR4 Board, t
鈮?/div>
10 sec.
V
R
T
A
= 25擄C
T
A
= 70擄C
P
D
I
F
I
FM
T
J
, T
stg
R
胃JA
30
1.4
0.9
4.0
50
鈥?5 to 150
90
V
W
A
擄C
擄C/W
4/27/01

GF4810相關(guān)型號PDF文件下載

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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | S...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | ...
    ETC

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