GF3443 Datasheet

IC型號：
GF3443
PDF描述：
TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 4.4A I(D) |...
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100.65KB
PDF頁數(shù)：
5頁
芯片廠家：
ETC

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GF3443

P-Channel Logic Level

Enhancement-Mode MOSFET

SOT-23-6L

0.122 (3.10)

0.114 (2.90)

Top View

0.118 (3.00)

0.106 (2.70)

0.067 (1.70)

0.059 (1.50)

0.020 (0.50)

0.010 (0.25)

0.037 (0.95)

0.075 (1.90)

EN ET

REN

oduct

New

0.008 (0.20)

0.004 (0.10)

鈥?0V

DS(ON)

鈩?/div>

鈥?.4A

廬

Pin Configuration (Top View)

Dimensions in inches

and (millimeters)

Mounting Pad Layout

0.028 (0.7)

0.039

(1.07)

0.004 (0.10)

0.0005 (0.013)

0.039 (1.00)

0.036 (0.90)

0.094 (2.4)

10擄 Typical

0.037 (0.95)

Ref.

0.074 (1.9)

Ref.

Mechanical Data

Case:

SOT-23-6L package

Terminals:

Leads solderable per MIL-STD-750,

Method 2026

Marking Code:

Features

鈥?Advanced trench process technology

鈥?High density cell design for ultra low on-resistance

鈥?Popular SOT-23-6L package with copper lead-frame

for superior thermal and electrical capabilities

鈥?Compact and low profile

鈥?鈥?.5V rated

Maximum Ratings and Thermal Characteristics

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

= 150擄C

Pulsed Drain Current

Maximum Power Dissipation

= 25擄C

= 70擄C

= 25擄C

= 70擄C

Symbol

, T

stg

胃JA

= 25擄C unless otherwise noted)

Limit

鈥?0

Unit

鹵

鈥?4.4

鈥?3.5

鈥?20

2.0

1.3

鈥?5 to 150

62.5

擄C

擄C/W

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient

(1)

Note:

(1) Surface Mounted on FR4 Board, t

鈮?/div>

5 sec.

5/4/01

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GF3443

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TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 4.4A I(D) |...

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GF3443

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