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GF2524 Datasheet

  • GF2524

  • TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 30V V(BR)DSS | SO

  • 105.19KB

  • 6頁(yè)

  • ETC

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GF2524
Asymmetric N-Channel Enhancement-Mode MOSFET
MOSFET 1: V
DS
30V
R
DS(ON)
37m鈩?/div>
I
D
5.8A
MOSFET 2: V
DS
30V
R
DS(ON)
18m鈩?/div>
I
D
7.8A
SO-8
0.197 (5.00)
0.189 (4.80)
8
5
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
ct
odu
Pr
ew
N
Dimensions in inches
and (millimeters)
0.019 (0.48)
x 45
擄
0.010 (0.25)
0.009 (0.23)
0.007 (0.18)
0
擄
鈥?8
擄
0.050(1.27)
0.016 (0.41)
S1
G1
S2
G2
1
8
D1
D1
D2
D2
Q1
2
3
4
7
6
Q2
5
Mounting Pad Layout
0.05 (1.27)
0.04 (1.02)
0.245 (6.22)
Min.
0.165 (4.19)
0.155 (3.94)
1
4
0.050 (1.27)
0.020 (0.51)
0.013 (0.33)
0.069 (1.75)
0.053 (1.35)
0.009 (0.23)
0.004 (0.10)
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
Features
鈥?Advanced Trench Process Technology
鈥?High Density Cell Design for Ultra Low
On-Resistance
鈥?Specially Designed for Low Voltage DC/DC
Converters
鈥?Fast Switching for High Efficiency
鈥?High temperature soldering in accordance
with CECC802/Reflow guaranteed
鈥?High efficiency, optimized for PWM.
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:
0.5g
Packaging Codes/Options:
5B/2.5K per reel, 12.5K per carton
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current T
J
= 150擄C
(1)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
(1)
Maximum Power Dissipation
(1)
T
A
= 25擄C
T
A
= 70擄C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
R
胃JA
A
= 25擄C unless otherwise noted)
MOSFET-1
30
MOSFET-2
30
Unit
V
鹵
20
5.8
20
1.7
2
1.3
鈥?5 to 150
62.5
鹵
20
7.8
30
1.7
2
1.3
A
W
擄C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
(1)
Thermal Resistance
62.5
擄C/W
6/1/00

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    TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 30V V(BR)DSS | SO
    ETC

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