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I

D

1.14A

N-Channel Enhancement-Mode MOSFET

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

3

.056 (1.43

)

.052 (1.33

)

Top View

CH

EN ET

T

REN

F

廬

0.031 (0.8)

G

0.035 (0.9)

0.079 (2.0)

Pin Configuration

1.

Gate

2.

Source

3.

Drain

1

2

max. .004 (0.1)

0.037 (0.95)

.007 (0.175)

.005 (0.125)

.037(0.95) .037(0.95)

.045 (1.15)

.037 (0.95)

Mounting Pad Layout

.016 (0.4)

.102 (2.6)

.094 (2.4)

Dimensions in inches and (millimeters)

Mechanical Data

Case:

SOT-23 Plastic Package

Weight:

approx. 0.008g

Marking Code:

402

Features

鈥?/div>

Advanced trench process technology

High density cell design for ultra-low on-resistance

Popular SOT-23 package

Compact and low profile

Low threshold voltage

Logic level

Fast switching

Maximum Ratings and Thermal Characteristics

Parameter

Drain-Source Voltage

Gate-Source-Voltage

Continuous Drain Current

(2)

T

J

= 150擄C

Pulsed Drain Current

(1)

Power Dissipation

(2)

T

J

= 150擄C

T

A

= 25擄C

T

A

= 70擄C

T

A

= 25擄C

T

A

= 70擄C

Symbol

V

DS

V

GS

I

D

I

DM

P

D

T

J

, T

stg

R

胃JA

(T

A

= 25擄C unless otherwise noted)

Limit

20

鹵

12

Unit

V

A

mW

擄C

擄C/W

1.14

0.91

4.5

417

267

鈥?5 to +150

300

Operating Junction and Storage Temperature Range

Junction-to-Ambient Thermal Resistance

(2)

Notes:

(1) Pulse width limited by maximum junction temperature.

(2) Surface mounted on a 1in

2

2oz. Cu PCB (FR-4 material)

Document Number #####

26-Nov-01

www.vishay.com

1

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