GF2301 Datasheet

IC型號(hào)：
GF2301
PDF描述：
TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 2.3A I(D) |...
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上傳產(chǎn)品規(guī)格書

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GF2301

P-Channel Enhancement-Mode MOSFET

TO-236AB (SOT-23)

.118 (3.0)

.110 (2.8)

.020 (0.51)

.015 (0.37)

odu

EN ET

REN

Top View

.055 (1.40)

.047 (1.20)

Low V

GS(th)

-20V

DS(ON)

0.13鈩?/div>

-2.3A

廬

0.031 (0.8)

0.035 (0.9)

0.079 (2.0)

Pin Configuration

Gate

Source

Drain

max. .004 (0.1)

Dimensions in inches

and (millimeters)

0.037 (0.95)

.007 (.180)

.003 (.085)

0.037 (0.95)

.041 (1.03) .041 (1.03)

.035 (0.89) .035 (0.89)

.020 (0.51) .020 (0.51)

.015 (0.37) .015 (0.37)

.098 (2.5)

.091 (2.3)

Mechanical Data

Case:

SOT-23 Plastic Package

Weight:

approx. 0.008g

Marking Code:

.047 (1.20)

.035 (0.90)

Mounting Pad Layout

Features

鈥?Advanced Trench Process Technology

鈥?High density cell design for ultra-low on-resistance

鈥?Popular SOT-23 package with copper lead frame

for superior thermal and electrical capabilities

鈥?Compact and low profile

鈥?鈥?2.5V rated

Maximum Ratings and Thermal Characteristics

Parameter

Drain-Source Voltage

Gate-Source-Voltage

Continuous Drain Current

= 150擄C

Pulsed Drain Current

(1)

(2)

= 25擄C unless otherwise noted)

Symbol

= 25擄C

= 70擄C

= 25擄C

= 70擄C

, T

stg

胃JA

Limit

鈥?0

鹵

Unit

擄C

擄C/W

鈥?.3

鈥?.5

鈥?0

1.25

0.8

鈥?5 to +150

100

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient Thermal Resistance

(2)

Note:

(1) Pulse width limited by maximum junction temperature.

(2) Surface mounted on FR4 board, t

鈮?/div>

5 sec.

7/11/01

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