鈥?/div>
Low forward voltage drop.
High current capability.
Easy pick and place.
High surge current capability.
3.93
3.73
0.181 (4.597)
0.157 (3.988)
0.062 (1.575)
0.055 (1.397)
2
1
0.114 (2.896)
0.098 (2.489)
0.208 (5.283)
0.188 (4.775)
1.67
1.47
+
SMA/DO-214AC
2.38
2.18
5.49
5.29
Minimum Recommended
Land Pattern
0.096 (2.438)
0.078 (1.981)
COLOR BAND DENOTES CATHODE
0.060 (1.524)
0.030 (0.762)
0.008 (0.203)
0.002 (0.051)
0.012 (0.305)
0.006 (0.152)
1.0 Ampere Glass Passivated Rectifier
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
胃JA
R
胃JC
T
stg
T
J
T
A
= 25擄C unless otherwise noted
Parameter
Average Rectified Current
@ T
L
= 125擄C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient **
Thermal Resistance, Junction to Case **
Storage Temperature Range
Operating Junction Temperature
Value
1.0
Units
A
30
2.0
13
80
26
-65 to +175
-65 to +175
A
W
mW/擄C
擄C/W
擄C/W
擄C
擄C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas.
Electrical Characteristics
Parameter
1A
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current
@ rated V
R
T
A
= 25擄C
T
A
= 125擄C
Maximum Forward Voltage @ 1.0 A
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
50
35
50
T
A
= 25擄C unless otherwise noted
Device
1B
100
70
100
1D
200
140
200
1G
400
280
400
5.0
50
1.0
2.0
15
1.2
1J
600
420
600
1K
800
560
800
1M
1000
800
1000
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
V
碌S
pF
錚?998
Fairchild Semiconductor International
GF1A-GF1M, Rev. E
1
2
3
4
