ISSUED DATE :2005/12/12
REVISED DATE :
GESD880
Description
NPN EPITAXIAL PLANAR TRANSISTOR
The GESD880 is designed for audio frequency power amplifier application.
Features
&
DC Current Gain: h
FE
= 300 (Max.) @ V
CE
= 5V, I
C
= 0.5A
High
&
Low
Saturation Voltage: V
CE (sat)
= 1.0V (Max.) @ I
C
= 3A, I
B
= 0.3A
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
脴
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation (T
A
=25 : )
Collector Power Dissipation (T
C
=25 : )
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
J
T
stg
Ratings
80
62
7
3
1.5
25
150
-55 ~ +150
Unit
V
V
V
A
W
W
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*V
BE(ON)
*h
FE
fT
Cob
Min.
80
62
7
-
-
-
-
-
60
-
-
Typ.
-
-
-
-
-
-
-
-
-
8
40
Max.
-
-
-
10
10
1.0
1.5
1.0
300
-
-
MHz
pF
Unit
V
V
V
uA
uA
V
V
V
I
C
=100uA, I
E
=0
I
C
=50mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=7V, I
C
=0
I
C
=3A, I
B
=0.3A
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=0.5A
V
CE
=5V, I
E
=-0.5A
V
CB
=10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
Classification Of h
FE
Rank
Range
O
60 ~ 120
Y
100 ~ 200
GR
150 ~ 300
GESD880
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