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GE2761 Datasheet

  • GE2761

  • N-CHANNEL ENHANCEMENT MODE POWER MOSFET

  • 298.97KB

  • 4頁(yè)

  • GTM

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Pb Free Plating Product
ISSUED DATE :2005/05/18
REVISED DATE :
GE2761
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
600/650V
1.0
10A
The GE2761 series provide the designer with best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version
(TO-220)
is available for low-profile applications and suited for low voltage applications
such as
DC/DC
converters.
*Low On-resistance
*Simple Drive Requirement
*RoHS Compliant
*Fast Switching Characteristic
Description
Features
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
脴
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@10V
Continuous Drain Current , V
GS
@10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Avalanche Current
Operating Junction and Storage Temperature Range
Symbol
- /A
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
I
AR
Tj, Tstg
Ratings
600/650
f 30
10
4.4
18
104
0.8
10
-55 ~ +150
Unit
V
V
A
A
A
W
W/
A
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
1.2
62
Unit
/W
/W
1/4

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