GE200NB60S Datasheet

IC型號(hào)：
GE200NB60S
PDF描述：
N-CHANNEL 150A - 600V - ISOTOP PowerMESH⑩ IGBT
文件大小：
275.25KB
PDF頁數(shù)：
13頁
芯片廠家：
STMICROELECTRONICS

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STGE200NB60S

N-channel 150A - 600V - ISOTOP

Low drop PowerMESH鈩?IGBT

General features

TYPE

CES

CE(sat)

(typ.)

1.2V

1.3V

150A

200A

100擄C

25擄C

STGE200NB60S 600V

鈻?/div>

High input impedance (voltage driven)

Low on-voltage drop (Vcesat)

Off losses include tail current

Low gate charge

High current capability

ISOTOP

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

PowerMESH鈩?IGBTs, with outstanding

performances. The suffix 鈥淪鈥?identifies a family

optimized to achieve very low VCE(sat) (@ max

frequency of 1KHz).

Internal schematic diagram

Applications

鈻?/div>

Low frequency motor controls

Aluminum welding equipment

Order codes

Part number

STGE200NB60S

Marking

GE200NB60S

Package

ISOTOP

Packaging

Tube

November 2006

Rev 8

1/13

www.st.com

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N-CHANNEL 150A - 600V - ISOTOP PowerMESH⑩ IGBT

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N-CHANNEL 150A - 600V - ISOTOP PowerMESH⑩ IGBT

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