ISSUED DATE :2005/01/12
REVISED DATE :
GE13005
NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Description
The GE13005 is designed for electronic transformers and power switching circuit applications.
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
脴
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation at Tc=25 :
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
PD
Ratings
+150
-55 ~ +150
700
400
9
4
75
V
V
V
A
W
Unit
Electrical Characteristics(Tc = 25
Parameter
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Frequency characteristics
Turn-On Time
Storage Time
Fall Time
Unless otherwise specified)
Min.
400
700
9
-
-
-
-
-
-
8
5
4
-
-
-
Symbol
V
CEO
(sus)
BV
CBO
BV
EBO
I
CBO
I
CEO
I
EBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*H
FE
1
*H
FE
2
f
T
ton
tstg
tf
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
50
10
0.8
2.0
1.6
60
40
-
0.8
4
0.9
Unit
V
V
V
A
A
A
V
V
V
Test Conditions
I
C
=10mA , I
B
=0
I
C
=1mA , I
E
=0
I
E
=1mA , I
C
=0
V
CB
=700V
V
CE
=400V
V
EB
=7V
I
C
=1A, I
B
=200mA
I
C
=4A, I
B
=1A
I
C
=2A, I
B
=500mA
V
CE
=10V, I
C
=500mA
V
CE
=5V, I
C
=2A
MHz
s
V
CE
=10V, I
C
=500mA, f=1MHz
V
CC
=125V, I
C
=2A, I
B1
=I
B2
=0.4A
*Pulse Test: Pulse Width=300 s, Duty Cycle
爐
%
1/3
1
2
3
