ISSUED DATE :2005/01/12
REVISED DATE :
GE13003
Description
NPN SILICON POWER TRANSISTOR
The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is
critical. It is particularly suited for 115 and 220v Switch-mode.
Features
&
Inductive Switching Matrix 0.5~1.5Amp, 25 and 100 : ` ` ` 1A, 100 : is 290ns(Typ)
tc @
&700V Blocking Capability
&SOA and Switching Application Information
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
脴
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
-Peak(1)
Base Current -Continuous
-Peak(1)
Emitter Current -Continuous
-Peak(1)
Total Power Dissipation at Ta=25 :
Derate above 25 :
Total Power Dissipation at Tc=25 :
Derate above 25 :
Symbol
Tj
Tstg
V
CEO
(sus)
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
PD
PD
Ratings
+150
-55 ~ +150
400
700
9
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
40
320
V
V
V
A
A
A
W
mW/ :
W
mW/ :
Unit
Thermal Characteristics
Parameter
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Maximum Lead Temperature for Soldering
Purposes:1/8鈥?from Case for 5 Seconds
(1)Pulse Test: Pulse Width=5ms, Duty Cycle
10%
Symbol
R
R
JA
JC
Value
89
3.12
275
Unit
/W
/W
T
L
1/4
1
2
3
4
