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GDU91-20221 Datasheet

  • GDU91-20221

  • Gate Drive Unit

  • 4頁

  • DYNEX

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GDU 91 20221
GDU 91-20221
Gate Drive Unit
Replaces March 1998 version, DS4569-3.1
DS4569-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s
Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
I
FGM
I
G(ON)
dI
GQ
/dt
30A
4A
30A/
碌
s
CONDITIONS - (UNLESS STATED OTHERWISE)
V
1
= +5V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
V
2
= +15V
DG408BP
500mm CO - AX cable type RC5327230
Hewlett Packard versatile link HFBR1524
30mA
Hewlett Packard versatile link HFBR2524
V
3
= -15V
ELECTRICAL CHARACTERISTICS
Symbol
I
V1
I
V2
I
V3
V
1(Min)
V
2(Min)
V
3(Min)
I
FGM
I
G(ON)
dI
FG
/dt
dI
GQ
/dt
Parameter
+5V PSU current
+15V PSU current
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, I
T
= 1000A
GTO T
j
= 125藲C
Min.
Typ.
Max.
2.2
0.55
3.0
Units
A
A
A
V
V
V
A
A
A/碌s
A/碌s
-
-
-
3.8
14.0
14.0
30
-
-
-
-
-
-
-
4
30
30
-
-
-
-
-
Measured 10 - 75% I
FGM
I
T
= 1000A, 90% I
G(ON)
- 50% I
GQM
-
-
-
-
-
-
-
-
-
-
1/4

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