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GDU90-20301 Datasheet

  • GDU90-20301

  • Gate Drive Unit

  • 4頁

  • DYNEX

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GDU 90 20301
GDU 90-20301
Gate Drive Unit
Replaces March 1998 version, DS4562-4.1
DS4562-5.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s
Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
I
FGM
I
G(ON)
dI
GQ
/dt
40A
8A
40A/
碌
s
CONDITIONS - (UNLESS STATED OTHERWISE)
V
1
= +5V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
V
2
= +15V
DG758BX
500mm CO - AX cable type RC5327230
Hewlett Packard versatile link HFBR 1524
30mA
Hewlett Packard versatile link HFBR 2524
V
3
= -15V
ELECTRICAL CHARACTERISTICS
Symbol
I
V1
I
V2
I
V3
V
1(Min)
V
2(Min)
V
3(Min)
I
FGM
I
G(ON)
dI
FG
/dt
dI
GQ
/dt
Parameter
+5V PSU current
+15V PSU current
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, I
T
= 3000A
GTO T
j
= 125藲C
Min.
Typ.
Max.
4.40
0.48
10.0
Units
A
A
A
V
V
V
A
A
A/碌s
A/碌s
-
-
-
3.8
14.0
14.0
40
-
-
-
-
-
-
-
8
40
40
-
-
-
-
-
Measured 10 - 75% I
FGM
I
T
= 3000A, 90% I
G(ON)
- 50% I
GQM
-
-
-
-
-
-
-
-
-
-
1/4

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