CORPORATION
G DB AS40
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
ISSUED DATE :2005/12/20
REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
The GDBAS40 is designed for high speed switching applications, circuit protection and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand
held and portable applications where space is limited.
Description
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
Absolute Maximum Ratings at T
A
= 25 :
Parameter
Operating Junction Temperature
Storage Temperature
Maximum Repetitive Peak Reverse Voltage
Thermal Resistance Junction to Ambient Air
Peak Forward Surge Current at tp < 1.0s
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
V
RRM
R
JA
Ratings
-55 ~ +125
-55 ~ +150
40
445
0.6
0.2
225
Unit
:
:
V
:
/W
A
A
mW
I
FSM
Io
PD
Electrical Characteristics
(at T
A
= 25 : unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Forward Voltage(tp < 300uS)
Reverse Leakage Current
Total Capacitance
Reverse Recover Time
Symbol
V
(BR)R
V
F
I
R
C
T
T
rr
Min.
40
-
-
-
-
-
-
-
Typ.
-
-
-
Max.
-
380
1000
200
5.0
5.0
Unit
V
mV
nA
pF
ns
IR=10 A
IF1=1mA
IF2=40mA
VR=30V
VR=0V, f=1MHz
IF=IR=10mA, RL=100 , Irr=1mA
Test Conditions
GDBAS40
Page: 1/2
1
2
