CORPORATION
GD421SD
Description
Package Dimensions
ISSUED DATE :2005/05/20
REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 0 V, C U R R E N T 0 . 1 A
The GD421SD is designed for low power rectification.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
V
RRM
V
RPS
V
DC
I
FSM
C
J
Io
PD
Ratings
+125
-40 ~ +125
40
28
40
1.0
6.0
0.1
225
V
V
V
A
pF
A
mW
Unit
Characteristics
Parameter
at Ta = 25 :
Symbol
V
(BR)R
V
F(1)
V
F(2)
I
R
Min.
40
-
-
-
Typ.
-
-
-
-
Max.
-
340
550
30
Unit
V
mV
mV
A
IR=50 A
IF=10mA
IF=100mA
VR=10V
Test Conditions
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
1/2
1
2
