ISSUED DATE :2005/01/10
REVISED DATE :
GD103SD
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 0 V, C U R R E N T 3 5 0 m A
Description
Package Dimensions
The GD103SD is designed for low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time
and low reverse capacitance.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Storage Temperature
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current(t 1.0s)
Thermal Resistance Junction to Ambient
Total Power Dissipation at Ta = 25 :
Symbol
Tstg
V
R
V
R(RMS)
I
F
I
FRM
R
JA
Ratings
-65 ~ +125
40
28
350
1.5
625
225
Unit
:
V
V
mA
A
:
/W
mW
PD
Characteristics at Ta = 25 :
Parameter
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Total Capacitance
Reverse Recover Time
Symbol
V
(BR)R
V
F(1)
V
F(2)
I
R
C
T
Trr
Min.
40
-
-
-
-
-
Typ.
-
-
-
-
5.0
10
Max.
-
370
600
5.0
-
-
Unit
V
mV
mV
A
pF
ns
IR=10 A
IF=20mA
IF=200mA
VR=30V
VR=0V, f=1MHz
IF=IR=200mA, IR(Rec)=20mA, RL=100 艁
Test Conditions
1/2
1
2
